Physical Electronics, Electronics Devices & ICs Questions Answer – Electronics Engineering MCQ
1) The unit of a thermal resistance of a semiconductor device is
a)Ohms
b) Ohms/oC
c) oC/OHM
d)oC/Watt
2) The amount of photoelectric emission current depends on
A. frequency of incident radiation
B. intensity of incident radiation
C. both frequency and intensity of incident radiation
D. none of the above
3)If a coil has diameter ‘d’, number of turns ‘N’ and form factor ‘F’ then the inductance of the coil is proportional to
a) N2dF
b) Nd2F
c) N2d2/F
d) N2d/F
4) In a bipolar transistor, the base collector junction has
A. forward bias
B. reverse bias
C. zero bias
D. zero or forward bias
5)A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
a) 100
b) 99
c) 1.01
d) 0.99
6) The amount of photoelectric emission current depends on
frequency of incident radiation
intensity of incident radiation
both frequency and intensity of incident radiation
none of the above
7) Almost all resistors are made in a monolithic integrated circuit
a) during the emitter diffusion
b) while growing the epitaxial layer
c) during the base diffusion
d) during the collector diffusion
8) In a semiconductor diode, the barrier offers opposition to
holes in Pregion only
free electrons in Nregion only
majority carriers in both regions
majority as well as minority carriers in both regions
9) At 250C, the collector-emitter voltage drop of a silicon transistor at saturation is approximately
a) 0.1 V
b) 0.3 V
c) 0.5 V
d) 0.7 V
10) The unit of mobility is
a) m2V-1s-1
b) mV-1s-1
c) Vsm-1
d) Vms-1